maximum ratings (t a =25 o c) symbol cxt a42 cxt a92 units collector-base voltage v cbo 300 300 v collector-emitter voltage v ceo 300 300 v emitter-base voltage v ebo 6.0 5.0 v collector current i c 500 ma power dissipation p d 1.2 w operating and storage junction temperature t j ,t stg -65 to +150 o c thermal resistance ja 104 o c/w electrical characteristics (t a =25 o c unless otherwise noted) cxt a42 cxt a92 symbol test conditions min max min max units i cbo v cb =200v 100 250 na i eb ov be =6.0v 100 - na i ebo v be =3.0v - 100 na bv cbo i c =100ma 300 300 v bv ceo i c =1.0ma 300 300 v bv ebo i e =100 a 6.0 5.0 v v ce(sat) i c =20ma, i b =2.0ma 0.5 0.5 v v be(sat) i c =20ma, i b =2.0ma 0.9 0.9 v h fe v ce =10v, i c =1.0ma 25 25 h fe v ce =10v, i c =10ma 40 40 h fe v ce =10v, i c =30ma 40 25 f t v ce =20v, i c =10ma, f=100mhz 50 50 mhz c ob v cb =20v, i e =0, f=1.0mhz 3.0 6.0 pf cxta42 npn cxta92 pnp surface mount silicon high voltage transistor sot-89 case central semiconductor corp. tm r3( 19-december 2001) description: the central semiconductor cxta42, cxta92 types are complementary surface mount epoxy molded silicon planar epitaxial transistors designed for high voltage applications.
a c e g f h j k m l b r3 1 3 2 central semiconductor corp. tm sot-89 case - mechanical outline cxta42 npn cxta92 pnp surface mount silicon high voltage transistor r3( 19-december 2001) lead code: 1) emitter 2) collector 3) base bottom view
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